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MITSUBISHI TRANSISTOR MODULES
QM100CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100CY-H
* * * * *
IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION UPS, CVCF
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
6 23
95 80 23 23.5
6 5.5
B2X
B2 E2 E2 E1
B1X
E1 B1
6 12 6 21.5
B2X
62 48 30
C2
E2E1
C1
B2 E2
C2
C1
B1X
12
E1 B1
M5 Tab#110, t=0.5
7 30
LABEL
21
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 100 100 620 6 1000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M5
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=1.3A -IC=100A (diode forward voltage) IC=100A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=100A, IB1=-IB2=2A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 100 2.0 2.5 1.75 -- 2.0 12 3.0 0.2 0.65 0.1 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
200 Tj=25C 10 3 7 5 3 2 10 2 7 5 3 2 VCE=2.0V
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
IB=2.0A IB=1.0A
VCE=5.0V
160
120
IB=0.6A IB=0.4A IB=0.2A
80
DC CURRENT GAIN hFE
5
40
0
0
1
2
3
4
10 1 7 5 3 Tj=25C 2 Tj=125C 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
VCE=2.0V Tj=25C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2
VBE(sat)
SATURATION VOLTAGE
2.6
3.0
10 0 7 5 4 3 IB=1.3A 2 Tj=25C Tj=125C -1 10 2 3 4 5 7 10 1
VCE(sat)
2 3 4 5 7 10 2
2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 IC=200A 4
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
10 2 7 5 3 2 10 1 7 5 3 2 ton 10 0 tf 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 VCC=300V IB1=-IB2=2A Tj=25C Tj=125C
ton, ts, tf (s)
ts
3
IC=100A
2
1
Tj=25C IC=50A Tj=125C 0 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 2 3 45 7 10 1
BASE CURRENT IB (A)
SWITCHING TIME
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
2
REVERSE BIAS SAFE OPERATING AREA
200 Tj=125C
COLLECTOR CURRENT IC (A)
SWITCHING TIME
10 1 7 5 4 3 2 tf 10 0 7 5 4 Tj=25C 3 Tj=125C 2 -1 2 3 4 5 7 10 0 10
ts, tf (s)
175 IB2=-2A 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 800 -5A
ts
VCC=300V IC=100A IB1=2A 2 3 4 5 7 10 1
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2 100 tw=50s 100s 90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
s 0 50 s 1m s m 10
10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 10
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 0.20
0.16
D C
80 100 120 140 160
VCE (V)
CASE TEMPERATURE
TC (C)
Zth (j-c) (C/ W)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.12 0.08
0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A)
1000
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 0 10 1 VCC=300V IB1=-IB2=2A Tj=25C Tj=125C Irr 10 0 Qrr trr 10 -1 2 3 4 5 7 10 2
800
400
200
0
10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
2 3 4 5 7 10 1
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 1.0
0.8
Zth (j-c) (C/ W)
0.6
0.4
0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
TIME (s)
Feb.1999
trr (s)
600
Irr (A), Qrr (c)

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